IRF1405 Series

Catalog

POWER MOSFET, N CHANNEL, 55 V, 169 A, 0.0053 OHM, TO-220AB, THROUGH HOLE

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]
Infineon Technologies IRF1405PBF	20 V	169 A	330 W	4 V	TO-220-3	Through Hole	55 V	10 V	-55 °C	175 ░C	5.3 mOhm	5480 pF	260 nC	N-Channel	MOSFET (Metal Oxide)	TO-220AB
Infineon Technologies IRF1405STRLPBF	20 V	131 A	200 W	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	55 V	10 V	-55 °C	175 ░C	5.3 mOhm	5480 pF	260 nC	N-Channel	MOSFET (Metal Oxide)	D2PAK
Infineon Technologies IRF1405ZPBF	20 V	75 A		4 V	TO-220-3	Through Hole	55 V	10 V	-55 °C	175 ░C			180 nC	N-Channel	MOSFET (Metal Oxide)	TO-220AB	4780 pF	4.9 mOhm	230 W
Infineon Technologies IRF1405STRRPBF	20 V	131 A	200 W	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	55 V	10 V	-55 °C	175 ░C	5.3 mOhm	5480 pF	260 nC	N-Channel	MOSFET (Metal Oxide)	D2PAK