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IPB45N06S3L-13 - PG-TO263-3-2

IPB45N06S3L-13

Obsolete
Infineon Technologies

MOSFET N-CH 55V 45A TO263-3

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IPB45N06S3L-13 - PG-TO263-3-2

IPB45N06S3L-13

Obsolete
Infineon Technologies

MOSFET N-CH 55V 45A TO263-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB45N06S3L-13
Current - Continuous Drain (Id) @ 25°C45 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]75 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]3600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)65 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs13.1 mOhm
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

IPB45N Series

N-Channel 55 V 45A (Tc) 65W (Tc) Surface Mount PG-TO263-3-2

Documents

Technical documentation and resources