MOSFET N-CH 55V 45A TO263-3
| Part | Supplier Device Package | Vgs(th) (Max) @ Id | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Package / Case | Technology | Power Dissipation (Max) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Grade | Qualification | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TO263-3-2 | 4 V | N-Channel | -55 °C | 175 ░C | 55 V | 57 nC | Surface Mount | 45 A | 15.4 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 65 W | 20 V | 10 V | 2980 pF | ||||||
Infineon Technologies | PG-TO263-3-2 | 2.2 V | N-Channel | -55 °C | 175 ░C | 55 V | Surface Mount | 45 A | 13.1 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 65 W | 16 V | 75 nC | Automotive | AEC-Q101 | 10 V | 5 V | 3600 pF | |||
Infineon Technologies | PG-TO263-3-2 | 4 V | N-Channel | -55 °C | 175 ░C | 60 V | Surface Mount | 45 A | 9.4 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | 71 W | 20 V | 10 V | 3785 pF | Automotive | AEC-Q101 |