SSM6P16FE(TE85L,F)

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 0.1A ES6

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 0.1A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6P16FE(TE85L,F)

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	11 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	8 Ohm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Operating Temperature	Power Dissipation (Max) [Max]	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type
Toshiba Semiconductor and Storage SSM6P16FE(TE85L,F)	8 Ohm	11 pF	ES6	P-Channel	150 °C	150 mW	MOSFET (Metal Oxide)	20 V	100 mA	SOT-563 SOT-666	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.48

General part information

P-Channel 20 V 100mA (Ta) 150mW (Ta) Surface Mount ES6

Technical documentation and resources

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