MOSFET P-CH 20V 0.1A ES6
| Part | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | FET Type | Operating Temperature | Power Dissipation (Max) [Max] | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 8 Ohm | 11 pF | ES6 | P-Channel | 150 °C | 150 mW | MOSFET (Metal Oxide) | 20 V | 100 mA | SOT-563 SOT-666 | Surface Mount |