IRS21094PBF

Active

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 14DIP

Search across all available documentation for this part.

Active

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 14DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IRS21094PBF

Channel Type	Synchronous
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	600 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	14-DIP
Package / Case [x]	0.3 "
Package / Case [y]	7.62 mm
Rise / Fall Time (Typ) [custom]	35 ns
Rise / Fall Time (Typ) [custom]	100 ns
Supplier Device Package	14-DIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Package / Case	Package / Case [y]	Package / Case [x]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Input Type	Number of Drivers	Channel Type	High Side Voltage - Max (Bootstrap) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Driven Configuration	Voltage - Supply [Max]	Voltage - Supply [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Mounting Type	Gate Type	Logic Voltage - VIL, VIH
Infineon Technologies IRS21094PBF	14-DIP	7.62 mm	0.3 "	290 mA	600 mA	Non-Inverting	2	Synchronous	600 V	150 °C	-40 °C	Half-Bridge	20 V	10 VDC	35 ns	100 ns	14-DIP	Through Hole	IGBT N-Channel MOSFET	0.8 V 2.5 V
Infineon Technologies IRS21094PBF	14-DIP	7.62 mm	0.3 "	290 mA	600 mA	Non-Inverting	2	Synchronous	600 V	150 °C	-40 °C	Half-Bridge	20 V	10 VDC	35 ns	100 ns	14-DIP	Through Hole	IGBT N-Channel MOSFET	0.8 V 2.5 V
Infineon Technologies IRS21094STRPBF	14-SOIC	3.9 mm	0.154 in	290 mA	600 mA	Non-Inverting	2	Synchronous	600 V	150 °C	-40 °C	Half-Bridge	20 V	10 VDC	35 ns	100 ns		Surface Mount	IGBT N-Channel MOSFET	0.8 V 2.5 V
Infineon Technologies IRS21094SPBF	14-SOIC	3.9 mm	0.154 in	290 mA	600 mA	Non-Inverting	2	Synchronous	600 V	150 °C	-40 °C	Half-Bridge	20 V	10 VDC	35 ns	100 ns		Surface Mount	IGBT N-Channel MOSFET	0.8 V 2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Half-Bridge Gate Driver IC Non-Inverting 14-DIP

Technical documentation and resources

No documents available