IC GATE DRVR HALF-BRIDGE 14DIP
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Input Type | Number of Drivers | Channel Type | High Side Voltage - Max (Bootstrap) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Driven Configuration | Voltage - Supply [Max] | Voltage - Supply [Min] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Supplier Device Package | Mounting Type | Gate Type | Logic Voltage - VIL, VIH |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 14-DIP | 7.62 mm | 0.3 " | 290 mA | 600 mA | Non-Inverting | 2 | Synchronous | 600 V | 150 °C | -40 °C | Half-Bridge | 20 V | 10 VDC | 35 ns | 100 ns | 14-DIP | Through Hole | IGBT N-Channel MOSFET | 0.8 V 2.5 V |
Infineon Technologies | 14-DIP | 7.62 mm | 0.3 " | 290 mA | 600 mA | Non-Inverting | 2 | Synchronous | 600 V | 150 °C | -40 °C | Half-Bridge | 20 V | 10 VDC | 35 ns | 100 ns | 14-DIP | Through Hole | IGBT N-Channel MOSFET | 0.8 V 2.5 V |
Infineon Technologies | 14-SOIC | 3.9 mm | 0.154 in | 290 mA | 600 mA | Non-Inverting | 2 | Synchronous | 600 V | 150 °C | -40 °C | Half-Bridge | 20 V | 10 VDC | 35 ns | 100 ns | Surface Mount | IGBT N-Channel MOSFET | 0.8 V 2.5 V | |
Infineon Technologies | 14-SOIC | 3.9 mm | 0.154 in | 290 mA | 600 mA | Non-Inverting | 2 | Synchronous | 600 V | 150 °C | -40 °C | Half-Bridge | 20 V | 10 VDC | 35 ns | 100 ns | Surface Mount | IGBT N-Channel MOSFET | 0.8 V 2.5 V |