AUIRF7342Q

Obsolete

Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8SOIC

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Obsolete

Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF7342Q

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	3.4 A
Drain to Source Voltage (Vdss)	55 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	690 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Technology	Mounting Type	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	FET Feature	Qualification	Grade
Infineon Technologies AUIRF7342Q	MOSFET (Metal Oxide)	Surface Mount	2 P-Channel	-55 °C	150 °C	38 nC	2 W	105 mOhm	690 pF	55 V	3.4 A	3 V	8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate
Infineon Technologies AUIRF7342QTR	MOSFET (Metal Oxide)	Surface Mount	2 P-Channel	-55 °C	150 °C	38 nC	2 W	105 mOhm	690 pF	55 V	3.4 A	3 V	8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 55V 3.4A 2W Surface Mount 8-SOIC

Technical documentation and resources

No documents available