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MOSFET 2P-CH 55V 3.4A 8SOIC
| Part | Technology | Mounting Type | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | FET Feature | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | Surface Mount | 2 P-Channel | -55 °C | 150 °C | 38 nC | 2 W | 105 mOhm | 690 pF | 55 V | 3.4 A | 3 V | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | Logic Level Gate | ||
Infineon Technologies | MOSFET (Metal Oxide) | Surface Mount | 2 P-Channel | -55 °C | 150 °C | 38 nC | 2 W | 105 mOhm | 690 pF | 55 V | 3.4 A | 3 V | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | Logic Level Gate | AEC-Q101 | Automotive |