SSM3J108TU(TE85L)

Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 1.8A UFM

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Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 1.8A UFM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J108TU(TE85L)

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 4 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs [Max]	158 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature	Power Dissipation (Max) [Max]	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage SSM3J108TU(TE85L)	1.8 A	P-Channel	Surface Mount	250 pF	20 V	158 mOhm	UFM	1 V	150 °C	500 mW	MOSFET (Metal Oxide)	8 V	1.8 V 4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 1.8A (Ta) 500mW (Ta) Surface Mount UFM

Technical documentation and resources