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MOSFET P-CH 20V 1.8A UFM
| Part | Current - Continuous Drain (Id) @ 25°C | FET Type | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature | Power Dissipation (Max) [Max] | Technology | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1.8 A | P-Channel | Surface Mount | 250 pF | 20 V | 158 mOhm | UFM | 1 V | 150 °C | 500 mW | MOSFET (Metal Oxide) | 8 V | 1.8 V 4 V |