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2N7002AKQB-QZ

2N7002AKQB-QZ

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Nexperia USA Inc.

2N7002AKQB-Q/SOT8015/DFN1110D-

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2N7002AKQB-QZ

2N7002AKQB-QZ

Active
Nexperia USA Inc.

2N7002AKQB-Q/SOT8015/DFN1110D-

Find alt

Description

General part information

2N7002AKQB-Q Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification2N7002AKQB-QZ
Current - Continuous Drain (Id) (Ta)340 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
GradeAutomotive
Input Capacitance (Ciss) (Max)9.2 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case3-XDFN Exposed Pad
Package NameDFN1110D-3
Power Dissipation (Max)6.9 W, 0.49 mW
QualificationAEC-Q101
Rds On (Max)2.8 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.6 V

Pricing

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CAD

3D models and CAD resources for this part