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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Package Name | Vgs(th) (Max) | Rds On (Max) | Package / Case | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Grade | FET Type | Power Dissipation (Max) | Mounting Type | Vgs (Max) | Technology | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Ta) | Qualification | Input Capacitance (Ciss) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | DFN1110D-3 | 2.6 V | 2.8 Ohm | 3-XDFN Exposed Pad | 10 V | 5 V | Automotive | N-Channel | 0.49 mW 6.9 W | Surface Mount Wettable Flank | 20 V | MOSFET (Metal Oxide) | -55 °C | 175 °C | 60 V | 340 mA | AEC-Q101 | 9.2 pF |