Specification	TSM60NC620CH C5G

Current - Continuous Drain (Id) (Tc)	7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	15 nC
Input Capacitance (Ciss) (Max)	501 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	TO-251 (IPAK)
Power Dissipation (Max)	78 W
Rds On (Max)	620 mOhm, 620 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	5 V

TSM60 Series

Part	Power Dissipation (Max)	Package Name	Mounting Type	Vgs(th) (Max)	FET Type	Technology	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max)
Taiwan Semiconductor Corporation TSM60NC165CI C0G	89 W	ITO-220	Through Hole	5 V	N-Channel	MOSFET (Metal Oxide)	24 A	600 V	30 V	44 nC 44 nC	-55 °C	150 °C	165 mOhm 165 mOhm	10 V	Isolated Tab TO-220-3 Full Pack	1857 pF
Taiwan Semiconductor Corporation TSM60N600CI C0G	83 W	ITO-220AB	Through Hole	4 V	N-Channel	MOSFET (Metal Oxide)	8 A	600 V	30 V	13 nC	-55 °C	150 °C	600 mOhm	10 V	Isolated Tab TO-220-3 Full Pack	743 pF
Taiwan Semiconductor Corporation TSM60NB190CI	33.8 W	ITO-220	Through Hole	4 V	N-Channel	MOSFET (Metal Oxide)	18 A	600 V	30 V	31 nC	-55 °C	150 °C	190 mOhm	10 V	Isolated Tab TO-220-3 Full Pack	1273 pF
Taiwan Semiconductor Corporation TSM60NB600CH	63 W	TO-251 (IPAK)	Through Hole	4 V	N-Channel	MOSFET (Metal Oxide)	7 A	600 V	30 V	13 nC	-55 °C	150 °C	600 mOhm	10 V	IPAK TO-251-3 Short Leads TO-251AA	516 pF
Taiwan Semiconductor Corporation TSM60N900CP ROG	50 W	TO-252 (DPAK)	Surface Mount	4 V	N-Channel	MOSFET (Metal Oxide)	4.5 A	600 V	30 V	9.7 nC	-55 °C	150 °C	900 mOhm	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	480 pF
Taiwan Semiconductor Corporation TSM60N750CP ROG	62.5 W	TO-252 (DPAK)	Surface Mount	4 V	N-Channel	MOSFET (Metal Oxide)	6 A	600 V	30 V	10.8 nC	-55 °C	150 °C	750 mOhm	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	554 pF
Taiwan Semiconductor Corporation TSM60NB380CF C0G	62.5 W	ITO-220S	Through Hole	4 V	N-Channel	MOSFET (Metal Oxide)	11 A	600 V	30 V	21 nC	-55 °C	150 °C	380 mOhm	10 V	TO-220-3 Full Pack	810 pF
Taiwan Semiconductor Corporation TSM60NB099PW C1G	329 W	TO-247	Through Hole	4 V	N-Channel	MOSFET (Metal Oxide)	38 A	600 V	30 V	62 nC	-55 °C	150 °C	99 mOhm	10 V	TO-247-3	2587 pF
Taiwan Semiconductor Corporation TSM60NC620CH C5G	78 W	TO-251 (IPAK)	Through Hole	5 V	N-Channel	MOSFET (Metal Oxide)	7 A	600 V	20 V	15 nC	-55 °C	150 °C	620 mOhm 620 mOhm	10 V	IPAK TO-251-3 Short Leads TO-251AA	501 pF
Taiwan Semiconductor Corporation TSM60NB099CF C0G	69 W	ITO-220S	Through Hole	4 V	N-Channel	MOSFET (Metal Oxide)	38 A	600 V	30 V	62 nC	-55 °C	150 °C	0 99 mOhm	10 V	TO-220-3 Full Pack	2587 pF

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