TSM60NB190CI

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Taiwan Semiconductor Corporation

600V, 18A, SINGLE N-CHANNEL POWE

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TSM60NB190CI

Active

Taiwan Semiconductor Corporation

600V, 18A, SINGLE N-CHANNEL POWE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TSM60NB190CI

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	1273 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	ITO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

TSM60 Series

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
Taiwan Semiconductor Corporation TSM60NC165CI C0G	165 mOhm	600 V	ITO-220	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	24 A	44 nC	30 V	10 V	N-Channel	1857 pF	TO-220-3 Full Pack Isolated Tab
Taiwan Semiconductor Corporation TSM60N600CI C0G	600 mOhm	600 V	ITO-220AB	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	8 A	13 nC	30 V	10 V	N-Channel	743 pF	TO-220-3 Full Pack Isolated Tab	4 V	83 W
Taiwan Semiconductor Corporation TSM60NB190CI	190 mOhm	600 V	ITO-220	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	18 A		30 V	10 V	N-Channel	1273 pF	TO-220-3 Full Pack Isolated Tab	4 V		31 nC
Taiwan Semiconductor Corporation TSM60NB600CH	600 mOhm	600 V	TO-251 (IPAK)	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	7 A	13 nC	30 V	10 V	N-Channel	516 pF	IPAK TO-251-3 Short Leads TO-251AA	4 V	63 W
Taiwan Semiconductor Corporation TSM60N750CP ROG	750 mOhm	600 V	TO-252 (DPAK)	Surface Mount	MOSFET (Metal Oxide)	-55 °C	150 °C	6 A		30 V	10 V	N-Channel	554 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V		10.8 nC	62.5 W
Taiwan Semiconductor Corporation TSM60NB380CF C0G	380 mOhm	600 V	ITO-220S	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	11 A	21 nC	30 V	10 V	N-Channel	810 pF	TO-220-3 Full Pack	4 V			62.5 W
Taiwan Semiconductor Corporation TSM60NB099PW C1G	99 mOhm	600 V	TO-247	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	38 A		30 V	10 V	N-Channel	2587 pF	TO-247-3	4 V	329 W	62 nC
Taiwan Semiconductor Corporation TSM60NC620CH C5G	620 mOhm	600 V	TO-251 (IPAK)	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	7 A		20 V	10 V	N-Channel	501 pF	IPAK TO-251-3 Short Leads TO-251AA		78 W
Taiwan Semiconductor Corporation TSM60NB099CF C0G	99 mOhm	600 V	ITO-220S	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	38 A		30 V	10 V	N-Channel	2587 pF	TO-220-3 Full Pack	4 V		62 nC
Taiwan Semiconductor Corporation TSM60NB099PW	99 mOhm	600 V	TO-247	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	38 A		30 V	10 V	N-Channel	2587 pF	TO-247-3	4 V	329 W	62 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	4000	$ 4.14

Description

General part information

TSM60 Series

N-Channel 600 V 18A (Tc) 33.8W (Tc) Through Hole ITO-220

Documents

Technical documentation and resources

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