IRF100S201

Obsolete

INFINEON

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 4.2 MOHM;

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IRF100S201

Obsolete

INFINEON

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 4.2 MOHM;

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Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

IRF100 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Technical Specifications

Parameters and characteristics for this part

Specification	IRF100S201

Current - Continuous Drain (Id) (Tc)	192 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	255 nC
Input Capacitance (Ciss) (Max)	9500 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3
Power Dissipation (Max)	441 W
Rds On (Max)	4.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF100 Series

Part	Gate Charge (Max)	Vgs (Max)	Power Dissipation (Max)	Package Name	Input Capacitance (Ciss) (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Rds On (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)
INFINEON IRF100S201	255 nC	20 V	441 W	PG-TO263-3	9500 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	MOSFET (Metal Oxide)	192 A	-55 °C	175 °C	100 V	N-Channel	Surface Mount	4.2 mOhm	4 V
INFINEON IRF100P219XKMA1	270 nC	20 V	341 W	TO-247AC	12020 pF	TO-247-3		MOSFET (Metal Oxide)	203 A	-55 °C	175 °C	100 V	N-Channel	Through Hole	1.7 mOhm	3.8 V	6 V	10 V
INFINEON IRF100B201	255 nC	20 V	441 W	TO-220AB	9500 pF	TO-220-3	10 V	MOSFET (Metal Oxide)	192 A	-55 °C	155 °C 175 °C	100 V	N-Channel	Through Hole	4.2 mOhm	4 V
INFINEON IRF100B202	116 nC	20 V	221 W	TO-220AB	4476 pF	TO-220-3	10 V	MOSFET (Metal Oxide)	97 A	-55 °C	175 °C	100 V	N-Channel	Through Hole	8.6 mOhm	4 V
INFINEON IRF100P218XKMA1	555 nC	20 V	556 W	TO-247AC	25000 pF	TO-247-3		MOSFET (Metal Oxide)	209 A	-55 °C	175 °C	100 V	N-Channel	Through Hole	1.28 mOhm	3.8 V	6 V	10 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Application Note EN

IRF100S201 | Datasheet

IR Part Numbering System