IRF100 Series

Manufacturer: INFINEON

Catalog

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 4.2 MOHM;

Part	Gate Charge (Max)	Vgs (Max)	Power Dissipation (Max)	Package Name	Input Capacitance (Ciss) (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Rds On (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)
INFINEON IRF100S201	255 nC	20 V	441 W	PG-TO263-3	9500 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	MOSFET (Metal Oxide)	192 A	-55 °C	175 °C	100 V	N-Channel	Surface Mount	4.2 mOhm	4 V
INFINEON IRF100P219XKMA1	270 nC	20 V	341 W	TO-247AC	12020 pF	TO-247-3		MOSFET (Metal Oxide)	203 A	-55 °C	175 °C	100 V	N-Channel	Through Hole	1.7 mOhm	3.8 V	6 V	10 V
INFINEON IRF100B201	255 nC	20 V	441 W	TO-220AB	9500 pF	TO-220-3	10 V	MOSFET (Metal Oxide)	192 A	-55 °C	155 °C 175 °C	100 V	N-Channel	Through Hole	4.2 mOhm	4 V
INFINEON IRF100B202	116 nC	20 V	221 W	TO-220AB	4476 pF	TO-220-3	10 V	MOSFET (Metal Oxide)	97 A	-55 °C	175 °C	100 V	N-Channel	Through Hole	8.6 mOhm	4 V
INFINEON IRF100P218XKMA1	555 nC	20 V	556 W	TO-247AC	25000 pF	TO-247-3		MOSFET (Metal Oxide)	209 A	-55 °C	175 °C	100 V	N-Channel	Through Hole	1.28 mOhm	3.8 V	6 V	10 V