IXTQ32N65X

Obsolete

IXYS

MOSFET N-CH 650V 32A TO3P

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Obsolete

IXYS

MOSFET N-CH 650V 32A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXTQ32N65X

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2205 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	135 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)
IXYS IXTQ32N65X	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	TO-3P	500 W	SC-65-3 TO-3P-3	135 mOhm	32 A	54 nC	N-Channel	30 V	5.5 V	650 V	2205 pF	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 32A (Tc) 500W (Tc) Through Hole TO-3P

Technical documentation and resources

No documents available