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MOSFET N-CH 650V 32A TO3P
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Mounting Type | Supplier Device Package | Power Dissipation (Max) | Package / Case | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Type | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | -55 °C | 150 °C | MOSFET (Metal Oxide) | Through Hole | TO-3P | 500 W | SC-65-3 TO-3P-3 | 135 mOhm | 32 A | 54 nC | N-Channel | 30 V | 5.5 V | 650 V | 2205 pF | 10 V |