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IPC100N04S51R2ATMA1

IPC100N04S51R2ATMA1

NRND
INFINEON

INFINEON’S IPC100N04S5-1R2 MOSFET FOR EFFICIENT POWER MANAGEMENT, HIGH PERFORMANCE, AND RELIABILITY. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

IPC100N04S51R2ATMA1

IPC100N04S51R2ATMA1

NRND
INFINEON

INFINEON’S IPC100N04S5-1R2 MOSFET FOR EFFICIENT POWER MANAGEMENT, HIGH PERFORMANCE, AND RELIABILITY. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Description

General part information

IPC100 Series

Say goodbye to old technology and unlock new levels of performance with Infineon's latest product,IAUCN04S7N012. Discover the enhanced efficiency and reliability of our newest technology withIAUCN04S7N012

Technical Specifications

Parameters and characteristics for this part

SpecificationIPC100N04S51R2ATMA1
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)7 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)131 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)7650 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8-34
Power Dissipation (Max)150 W
QualificationAEC-Q101
Rds On (Max)1.2 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.4 V

Pricing

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CAD

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Documents

Technical documentation and resources