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INFINEON BSC066N06NSATMA1

IPC100N04S5L1R9ATMA1

NRND
INFINEON

INFINEON’S IPC100N04S5L-1R9 IS A HIGH-PERFORMANCE MOSFET TRANSISTOR WITH LOW RDS(ON) OF 1.9MΩ FOR EFFICIENT POWER MANAGEMENT. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

INFINEON BSC066N06NSATMA1

IPC100N04S5L1R9ATMA1

NRND
INFINEON

INFINEON’S IPC100N04S5L-1R9 IS A HIGH-PERFORMANCE MOSFET TRANSISTOR WITH LOW RDS(ON) OF 1.9MΩ FOR EFFICIENT POWER MANAGEMENT. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Description

General part information

IPC100 Series

Say goodbye to old technology and unlock new levels of performance with Infineon's latest product,IAUCN04S7L019. Discover the enhanced efficiency and reliability of our newest technology withIAUCN04S7L019.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPC100N04S5L1R9ATMA1
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)81 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)4310 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8-34
Power Dissipation (Max)100 W
QualificationAEC-Q101
Rds On (Max)1.9 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max)2 V

Pricing

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CAD

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Documents

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