Specification	APT80GA90S

Current - Collector (Ic) (Max)	145 A
Current - Collector Pulsed (Icm)	239 A
Gate Charge	200 nC
IGBT Type	PT
Input Type	Standard
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268-3, TO-268AA
Package Name	D3PAK
Power - Max	625 W
Switching Energy (Off)	1.389 mJ
Switching Energy (On)	1.625 mJ
Td (off) @ 25°C	149 ns
Td (on) @ 25°C	18 ns
Test Condition Current	47 A
Test Condition Resistance	4.7 Ohm
Test Condition Voltage	600 V
Test Condition Voltage (Secondary)	15 V
Vce(on) (Max)	3.1 V
Voltage - Collector Emitter Breakdown (Max)	900 V

IGBT-PT-900V Series

Part	Mounting Type	Switching Energy (On)	Switching Energy (Off)	Input Type	Power - Max	IGBT Type	Vce(on) (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Gate Charge	Td (on) @ 25°C	Td (off) @ 25°C	Operating Temperature (Min)	Operating Temperature (Max)	Voltage - Collector Emitter Breakdown (Max)	Test Condition Current	Test Condition Voltage	Test Condition Resistance	Test Condition Voltage (Secondary)	Package Name	Package / Case	Switching Energy	Input Capacitance (Cies) @ Vce	Input	Configuration	Current - Collector Cutoff (Max)
Microchip Technology APT80GA90S	Surface Mount	1.625 mJ	1.389 mJ	Standard	625 W	PT	3.1 V	145 A	239 A	200 nC	18 ns	149 ns	-55 °C	150 °C	900 V	47 A	600 V	4.7 Ohm	15 V	D3PAK	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA
Microchip Technology APT40GP90BG	Through Hole		825 µJ	Standard	543 W	PT	3.9 V	100 A	160 A	145 nC	16 ns	75 ns	-55 °C	150 °C	900 V	40 A	600 V	5 Ohm	15 V	TO-247 [B]	TO-247-3	825 µJ
Microchip Technology APT40GP90J	Chassis Mount				284 W	PT	3.9 V	68 A					-55 °C	150 °C	900 V					ISOTOPÛ	miniBLOC SOT-227-4		3.3 nF	Standard	Single	250 µA
Microchip Technology APT64GA90B	Through Hole	1857 µJ	2311 µJ	Standard	500 VA	PT	3.1 V	117 A	193 A	162 nC	18 ns	131 ns	-55 °C	150 °C	900 V	38 A	600 V	4.7 Ohm	15 V	TO-247 [B]	TO-247-3
Microchip Technology APT80GA90B	Through Hole	1652 µJ	1.389 mJ	Standard	625 W	PT	3.1 V	145 A	239 A	200 nC	18 ns	149 ns	-55 °C	150 °C	900 V	47 A	600 V	4.7 Ohm	15 V	TO-247 [B]	TO-247-3
Microchip Technology APT15GP90BDQ1G	Through Hole			Standard	250 VA	PT	3.9 V	43 A	60 A	60 nC	9 ns	33 ns	-55 °C	150 °C	900 V	15 A	600 V	4.3 Ohm	15 V	TO-247 [B]	TO-247-3	200 µJ
Microchip Technology APT43GA90BD30	Through Hole	875 µJ	425 µJ	Standard	337 W	PT	3.1 V	78 A	129 A	116 nC	12 ns	82 ns	-55 °C	150 °C	900 V	25 A	600 V	4.7 Ohm	15 V	TO-247 [B]	TO-247-3
Microchip Technology APT25GP90BG	Through Hole		370 µJ	Standard	417 W	PT	3.9 V	72 A	110 A	110 nC	13 ns	55 ns	-55 °C	150 °C	900 V	25 A	600 V	5 Ohm	15 V	TO-247 [B]	TO-247-3	370 µJ
Microchip Technology APT35GA90B	Through Hole	642 µJ	382 µJ	Standard	290 W	PT	3.1 V	63 A	105 A	84 nC	12 ns	104 ns	-55 °C	150 °C	900 V	18 A	600 V	10 Ohm	15 V	TO-247 [B]	TO-247-3
Microchip Technology APT64GA90B2D30	Through Hole	1192 µJ	1088 µJ	Standard	500 VA	PT	3.1 V	117 A	193 A	162 nC	18 ns	131 ns	-55 °C	150 °C	900 V	38 A	600 V	4.7 Ohm	15 V		TO-247-3 Variant