
IGBT-PT-900V Series
Manufacturer: Microchip Technology
IGBT PT MOS 8 SINGLE 900 V 80 A TO-268 2 TO-268 TUBE ROHS COMPLIANT: YES
| Part | Mounting Type | Switching Energy (On) | Switching Energy (Off) | Input Type | Power - Max | IGBT Type | Vce(on) (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Gate Charge | Td (on) @ 25°C | Td (off) @ 25°C | Operating Temperature (Min) | Operating Temperature (Max) | Voltage - Collector Emitter Breakdown (Max) | Test Condition Current | Test Condition Voltage | Test Condition Resistance | Test Condition Voltage (Secondary) | Package Name | Package / Case | Switching Energy | Input Capacitance (Cies) @ Vce | Input | Configuration | Current - Collector Cutoff (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | Surface Mount | 1.625 mJ | 1.389 mJ | Standard | 625 W | PT | 3.1 V | 145 A | 239 A | 200 nC | 18 ns | 149 ns | -55 °C | 150 °C | 900 V | 47 A | 600 V | 4.7 Ohm | 15 V | D3PAK | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | |||||
Microchip Technology | Through Hole | 825 µJ | Standard | 543 W | PT | 3.9 V | 100 A | 160 A | 145 nC | 16 ns | 75 ns | -55 °C | 150 °C | 900 V | 40 A | 600 V | 5 Ohm | 15 V | TO-247 [B] | TO-247-3 | 825 µJ | |||||
Microchip Technology | Chassis Mount | 284 W | PT | 3.9 V | 68 A | -55 °C | 150 °C | 900 V | ISOTOPÛ | miniBLOC SOT-227-4 | 3.3 nF | Standard | Single | 250 µA | ||||||||||||
Microchip Technology | Through Hole | 1857 µJ | 2311 µJ | Standard | 500 VA | PT | 3.1 V | 117 A | 193 A | 162 nC | 18 ns | 131 ns | -55 °C | 150 °C | 900 V | 38 A | 600 V | 4.7 Ohm | 15 V | TO-247 [B] | TO-247-3 | |||||
Microchip Technology | Through Hole | 1652 µJ | 1.389 mJ | Standard | 625 W | PT | 3.1 V | 145 A | 239 A | 200 nC | 18 ns | 149 ns | -55 °C | 150 °C | 900 V | 47 A | 600 V | 4.7 Ohm | 15 V | TO-247 [B] | TO-247-3 | |||||
Microchip Technology | Through Hole | Standard | 250 VA | PT | 3.9 V | 43 A | 60 A | 60 nC | 9 ns | 33 ns | -55 °C | 150 °C | 900 V | 15 A | 600 V | 4.3 Ohm | 15 V | TO-247 [B] | TO-247-3 | 200 µJ | ||||||
Microchip Technology | Through Hole | 875 µJ | 425 µJ | Standard | 337 W | PT | 3.1 V | 78 A | 129 A | 116 nC | 12 ns | 82 ns | -55 °C | 150 °C | 900 V | 25 A | 600 V | 4.7 Ohm | 15 V | TO-247 [B] | TO-247-3 | |||||
Microchip Technology | Through Hole | 370 µJ | Standard | 417 W | PT | 3.9 V | 72 A | 110 A | 110 nC | 13 ns | 55 ns | -55 °C | 150 °C | 900 V | 25 A | 600 V | 5 Ohm | 15 V | TO-247 [B] | TO-247-3 | 370 µJ | |||||
Microchip Technology | Through Hole | 642 µJ | 382 µJ | Standard | 290 W | PT | 3.1 V | 63 A | 105 A | 84 nC | 12 ns | 104 ns | -55 °C | 150 °C | 900 V | 18 A | 600 V | 10 Ohm | 15 V | TO-247 [B] | TO-247-3 | |||||
Microchip Technology | Through Hole | 1192 µJ | 1088 µJ | Standard | 500 VA | PT | 3.1 V | 117 A | 193 A | 162 nC | 18 ns | 131 ns | -55 °C | 150 °C | 900 V | 38 A | 600 V | 4.7 Ohm | 15 V | TO-247-3 Variant |