SSM3J46CTB(TPL3)

Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A CST3B

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Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A CST3B

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J46CTB(TPL3)

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.7 nC
Input Capacitance (Ciss) (Max) @ Vds	290 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-SMD, No Lead
Rds On (Max) @ Id, Vgs [Max]	103 mOhm
Supplier Device Package	CST3B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Operating Temperature	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM3J46CTB(TPL3)	103 mOhm	1 V	CST3B	4.7 nC	1.5 V 4.5 V	3-SMD No Lead	8 V	150 °C	MOSFET (Metal Oxide)	Surface Mount	2 A	290 pF	P-Channel	20 V

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General part information

P-Channel 20 V 2A (Ta) Surface Mount CST3B

Technical documentation and resources