MOSFET P-CH 20V 2A CST3B
| Part | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Vgs (Max) | Operating Temperature | Technology | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 103 mOhm | 1 V | CST3B | 4.7 nC | 1.5 V 4.5 V | 3-SMD No Lead | 8 V | 150 °C | MOSFET (Metal Oxide) | Surface Mount | 2 A | 290 pF | P-Channel | 20 V |