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STB42N60M2-EP - D2Pak

STB42N60M2-EP

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STMicroelectronics

N-CHANNEL 600 V, 0.076 OHM TYP., 34 A MDMESH M2 EP POWER MOSFET IN A D2PAK PACKAGE

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STB42N60M2-EP - D2Pak

STB42N60M2-EP

Active
STMicroelectronics

N-CHANNEL 600 V, 0.076 OHM TYP., 34 A MDMESH M2 EP POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB42N60M2-EP
Current - Continuous Drain (Id) @ 25°C34 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs55 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2370 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]250 W
Rds On (Max) @ Id, Vgs87 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.93
10$ 4.67
100$ 3.40
500$ 2.85
Digi-Reel® 1$ 6.93
10$ 4.67
100$ 3.40
500$ 2.85
Tape & Reel (TR) 1000$ 2.81

Description

General part information

STB42N60M2-EP Series

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters.