STB42N60M2-EP Series

N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package

Catalog

N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type
STMicroelectronics STB42N60M2-EP	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	55 nC	150 °C	87 mOhm	600 V	25 V	TO-263 (D2PAK)	10 V	MOSFET (Metal Oxide)	2370 pF	250 W	Surface Mount	4.75 V	34 A	N-Channel

Catalog

N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters.