DMN2710UFBQ-7B
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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DMN2710UFBQ-7B
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2710UFBQ-7B |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.3 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 42 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-UFDFN |
| Power Dissipation (Max) | 720 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 450 mOhm |
| Supplier Device Package | X1-DFN1006-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 6 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DMN2710UFBQ Series
This MOSFET has been designed to minimize the on-state resistance (RDS(ON))yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources