DMN2710UFBQ Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Grade	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Supplier Device Package
Diodes Inc DMN2710UFBQ-7B	Surface Mount	1.8 V 4.5 V	N-Channel	-55 °C	150 °C	0.6 nC	1.3 A	3-UFDFN	Automotive	1 V	MOSFET (Metal Oxide)	450 mOhm	20 V	6 V	AEC-Q101	42 pF	720 mW	X1-DFN1006-3

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Footprint of Just 0.6mm2— 13 Times Smaller than SOT23

• Low Gate Threshold Voltage

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DIODES™ DMN2710UFBQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON))yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.