TSM2N100CP ROG

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 1000V 1.85A TO252

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 1000V 1.85A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	TSM2N100CP ROG

Current - Continuous Drain (Id) @ 25°C	1.85 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	625 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	77 W
Rds On (Max) @ Id, Vgs	8.5 Ohm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type
Taiwan Semiconductor Corporation TSM2N100CP ROG	30 V	TO-252 (DPAK)	10 V	-55 °C	150 °C	5.5 V	17 nC	77 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	8.5 Ohm	1.85 A	MOSFET (Metal Oxide)	625 pF	1000 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1000 V 1.85A (Tc) 77W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources

No documents available