MOSFET N-CH 1000V 1.85A TO252
| Part | Vgs (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Package / Case | Mounting Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 30 V | TO-252 (DPAK) | 10 V | -55 °C | 150 °C | 5.5 V | 17 nC | 77 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Surface Mount | 8.5 Ohm | 1.85 A | MOSFET (Metal Oxide) | 625 pF | 1000 V | N-Channel |