TSM2N100 Series
Manufacturer: Taiwan Semiconductor Corporation
MOSFET N-CH 1000V 1.85A TO252
| Part | Input Capacitance (Ciss) (Max) | FET Type | Gate Charge (Max) | Vgs (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Package / Case | Package Name | Technology | Current - Continuous Drain (Id) (Tc) | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) | Power Dissipation (Max) | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 625 pF | N-Channel | 17 nC | 30 V | -55 °C | 150 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252 (DPAK) | MOSFET (Metal Oxide) | 1.85 A | Surface Mount | 1000 V | 10 V | 8.5 Ohm | 77 W | 5.5 V |