SSM6N815R,LF

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 2A 6TSOPF

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 2A 6TSOPF

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6N815R,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	100 V
FET Feature	4V Drive, Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	3.1 nC
Input Capacitance (Ciss) (Max) @ Vds	290 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	1.8 W
Rds On (Max) @ Id, Vgs [Max]	103 mOhm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Technology	Rds On (Max) @ Id, Vgs [Max]	Configuration	Drain to Source Voltage (Vdss)	FET Feature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage SSM6N815R,LF	MOSFET (Metal Oxide)	103 mOhm	2 N-Channel (Dual)	100 V	4V Drive Logic Level Gate	Surface Mount	290 pF	1.8 W	2.5 V	6-TSOP-F	150 °C	6-SMD Flat Leads	3.1 nC	2 A

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General part information

Mosfet Array 100V 2A (Ta) 1.8W (Ta) Surface Mount 6-TSOP-F

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