SSM6N815 Series

Catalog

MOSFET 2N-CH 100V 2A 6TSOPF

Part	Technology	Rds On (Max) @ Id, Vgs [Max]	Configuration	Drain to Source Voltage (Vdss)	FET Feature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage SSM6N815R,LF	MOSFET (Metal Oxide)	103 mOhm	2 N-Channel (Dual)	100 V	4V Drive Logic Level Gate	Surface Mount	290 pF	1.8 W	2.5 V	6-TSOP-F	150 °C	6-SMD Flat Leads	3.1 nC	2 A