IRF7455TRPBF

Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 7.5 MOHM;

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Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 7.5 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7455TRPBF

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	2.8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	56 nC
Input Capacitance (Ciss) (Max) @ Vds	3480 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs [Max]	7.5 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IRF7455TRPBF	12 V	56 nC	Surface Mount	15 A	8-SOIC	3.9 mm	0.154 in	8-SO	2.5 W	7.5 mOhm	2.8 V 10 V	3480 pF	2 V	N-Channel	30 V	MOSFET (Metal Oxide)	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 15A (Ta) 2.5W (Ta) Surface Mount 8-SO

Technical documentation and resources