Beta
⌘K
IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 7.5 MOHM;
| Part | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | FET Type | Drain to Source Voltage (Vdss) | Technology | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 12 V | 56 nC | Surface Mount | 15 A | 8-SOIC | 3.9 mm | 0.154 in | 8-SO | 2.5 W | 7.5 mOhm | 2.8 V 10 V | 3480 pF | 2 V | N-Channel | 30 V | MOSFET (Metal Oxide) | -55 °C | 150 °C |