DMNH6009SPS-13
ActiveDiodes Inc
TRANSISTOR ENHANCEMENT MOSFET N-CH 60V 95A 8-PIN POWERDI 5060 T/R
Deep-Dive with AI
Search across all available documentation for this part.
DMNH6009SPS-13
ActiveDiodes Inc
TRANSISTOR ENHANCEMENT MOSFET N-CH 60V 95A 8-PIN POWERDI 5060 T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMNH6009SPS-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 95 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 37.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1882 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Rds On (Max) @ Id, Vgs | 7.3 mOhm |
| Supplier Device Package | PowerDI5060-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMNH6009SPS Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources