DMNH6009SPS Series

60V 175°C N-Channel Enhancement Mode MOSFET

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Diodes Inc DMNH6009SPS-13	PowerDI5060-8	7.3 mOhm	37.3 nC	1882 pF	60 V	4.5 V 10 V	MOSFET (Metal Oxide)	20 V	Surface Mount	95 A	8-PowerTDFN	N-Channel	-55 °C	175 ░C	3 V

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C—Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switch (UIS) Test in Production

• Low RDS(ON)—Minimizes Power Losses

• Low Qg—Minimizes Switching Losses

• < 1.1mm Package Profile—Ideal for Thin Applications

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found athttps://www.diodes.com/products/automotive/automotive-products/.

• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.