Technical Specifications
Parameters and characteristics for this part
| Specification | STP16NF06 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 13 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) @ Id, Vgs [Max] | 100 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.17 | |
| 50 | $ 0.94 | |||
| 100 | $ 0.75 | |||
| 500 | $ 0.63 | |||
| 1000 | $ 0.51 | |||
| 2000 | $ 0.48 | |||
| 5000 | $ 0.46 | |||
| 10000 | $ 0.44 | |||
Description
General part information
STP16N65M2 Series
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Documents
Technical documentation and resources
Datasheet
DatasheetAN4191
Application NotesUM1575
User ManualsFlyers (5 of 6)
Flyers (5 of 6)
TN1225
Technical Notes & ArticlesAN4337
Application NotesFlyers (5 of 6)
AN3267
Application NotesDS2339
Product SpecificationsFlyers (5 of 6)
AN4390
Application NotesTN1224
Technical Notes & ArticlesFlyers (5 of 6)
Flyers (5 of 6)
