STP16N65M2 Series

N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package

Catalog

N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	FET Type	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
STMicroelectronics STP16N65M2	25 V	650 V	-55 °C	150 °C	19.5 nC	Through Hole	TO-220	N-Channel	TO-220-3	MOSFET (Metal Oxide)	11 A	4 V	360 mOhm	110 W	10 V
STMicroelectronics STP16N60M2	25 V	600 V			19 nC	Through Hole	TO-220	N-Channel	TO-220-3	MOSFET (Metal Oxide)	12 A	4 V	320 mOhm	110 W	10 V	150 °C	700 pF
STMicroelectronics STP16NF06	20 V	60 V	-55 °C	175 ░C		Through Hole	TO-220	N-Channel	TO-220-3	MOSFET (Metal Oxide)	16 A	4 V			10 V		315 pF	100 mOhm	13 nC	45 W

Catalog

N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package

Description

This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.