DMP3098L-7

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMP3098L-7

Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	336 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.08 W
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Dual P-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Configuration	Power - Max [Max]	Package / Case [y]	Package / Case [x]	Rds On (Max) @ Id, Vgs [Max]	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMP3098L-7	1.08 W	P-Channel	336 pF	4.5 V 10 V	Surface Mount	SOT-23-3	3.8 A	20 V	2.1 V	30 V	70 mOhm	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	MOSFET (Metal Oxide)
Diodes Inc DMP3098LSD-13			336 pF		Surface Mount	8-SO	4.4 A		2.1 V	30 V		8-SOIC	-55 °C	150 °C	MOSFET (Metal Oxide)	2 P-Channel	1.8 W	3.9 mm	0.154 in	65 mOhm	Logic Level Gate	7.8 nC

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General part information

Dual P-Channel Enhancement Mode MOSFET

Technical documentation and resources