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Dual P-Channel Enhancement Mode MOSFET
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Dual P-Channel Enhancement Mode MOSFET
Dual P-Channel Enhancement Mode MOSFET
| Part | Power Dissipation (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Configuration | Power - Max [Max] | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs [Max] | FET Feature | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 1.08 W | P-Channel | 336 pF | 4.5 V 10 V | Surface Mount | SOT-23-3 | 3.8 A | 20 V | 2.1 V | 30 V | 70 mOhm | SC-59 SOT-23-3 TO-236-3 | -55 °C | 150 °C | MOSFET (Metal Oxide) | |||||||
Diodes Inc | 336 pF | Surface Mount | 8-SO | 4.4 A | 2.1 V | 30 V | 8-SOIC | -55 °C | 150 °C | MOSFET (Metal Oxide) | 2 P-Channel | 1.8 W | 3.9 mm | 0.154 in | 65 mOhm | Logic Level Gate | 7.8 nC |