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STB24N65M2 - D2PAK

STB24N65M2

Obsolete
STMicroelectronics

N-CHANNEL 650 V, 0.185 OHM TYP., 16 A MDMESH M2 POWER MOSFET IN D2PAK PACKAGE

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STB24N65M2 - D2PAK

STB24N65M2

Obsolete
STMicroelectronics

N-CHANNEL 650 V, 0.185 OHM TYP., 16 A MDMESH M2 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB24N65M2
Current - Continuous Drain (Id) @ 25°C16 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC
Input Capacitance (Ciss) (Max) @ Vds1060 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)150 W
Rds On (Max) @ Id, Vgs230 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

STB24N65M2 Series

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.