STB24N65M2 Series

N-channel 650 V, 0.185 Ohm typ., 16 A MDmesh M2 Power MOSFET in D2PAK package

Catalog

N-channel 650 V, 0.185 Ohm typ., 16 A MDmesh M2 Power MOSFET in D2PAK package

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology
STMicroelectronics STB24N65M2	650 V	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	25 V	16 A	N-Channel	29 nC	4 V	-55 °C	150 °C	Surface Mount	1060 pF	150 W	230 mOhm	MOSFET (Metal Oxide)

Catalog

N-channel 650 V, 0.185 Ohm typ., 16 A MDmesh M2 Power MOSFET in D2PAK package

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.