PMV32UP,215

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Nexperia USA Inc.

20 V, 4 A P-CHANNEL TRENCH MOSFET

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PMV32UP,215

Active

Nexperia USA Inc.

20 V, 4 A P-CHANNEL TRENCH MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMV32 Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMV32UP,215

Current - Continuous Drain (Id) (Ta)	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	15.5 nC
Input Capacitance (Ciss) (Max)	1890 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	TO-236AB
Power Dissipation (Max)	510 mW
Rds On (Max)	36 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	950 mV

PMV32 Series

20 V, 4 A P-channel Trench MOSFET

Part	Technology	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Package Name	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Vgs (Max)	Vgs(th) (Max)	FET Type
Nexperia USA Inc. PMV32UP,215	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	510 mW	1890 pF	4 A	4.5 V	1.8 V	36 mOhm	TO-236AB	Surface Mount	20 V	15.5 nC	8 V	950 mV	P-Channel