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20 V, 4 A P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, 4 A P-channel Trench MOSFET
20 V, 4 A P-channel Trench MOSFET
| Part | Technology | Package / Case | Operating Temperature (Min) | Operating Temperature (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Rds On (Max) | Package Name | Mounting Type | Drain to Source Voltage (Vdss) | Gate Charge (Max) | Vgs (Max) | Vgs(th) (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | -55 °C | 150 °C | 510 mW | 1890 pF | 4 A | 4.5 V | 1.8 V | 36 mOhm | TO-236AB | Surface Mount | 20 V | 15.5 nC | 8 V | 950 mV | P-Channel |