SSM5H08TU,LF

Active

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 1.5A UFV

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 1.5A UFV

Technical Specifications

Parameters and characteristics for this part

Specification	SSM5H08TU,LF

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	125 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD (5 Leads), Flat Leads
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	UFV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.1 V

Part	Power Dissipation (Max) [Max]	FET Feature	Operating Temperature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Package / Case	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Toshiba Semiconductor and Storage SSM5H08TU,LF	500 mW	Schottky Diode (Isolated)	150 °C	20 V	160 mOhm	1.5 A	4 V	2.5 V	1.1 V	MOSFET (Metal Oxide)	UFV	6-SMD (5 Leads) Flat Leads	N-Channel	Surface Mount	125 pF	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 1.5A (Ta) 500mW (Ta) Surface Mount UFV

Technical documentation and resources

No documents available