Beta
⌘K
MOSFET N-CH 20V 1.5A UFV
| Part | Power Dissipation (Max) [Max] | FET Feature | Operating Temperature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs(th) (Max) @ Id | Technology | Supplier Device Package | Package / Case | FET Type | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 500 mW | Schottky Diode (Isolated) | 150 °C | 20 V | 160 mOhm | 1.5 A | 4 V | 2.5 V | 1.1 V | MOSFET (Metal Oxide) | UFV | 6-SMD (5 Leads) Flat Leads | N-Channel | Surface Mount | 125 pF | 12 V |