PMCM6501VPEZ
ActiveNexperia USA Inc.
TRANS MOSFET P-CH 12V 8.2A 6-PIN WLCSP T/R
PMCM6501VPEZ
ActiveNexperia USA Inc.
TRANS MOSFET P-CH 12V 8.2A 6-PIN WLCSP T/R
Description
General part information
PMCM6501VPE Series
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | PMCM6501VPEZ |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 6.2 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 29.4 nC, 29.4 nC |
| Input Capacitance (Ciss) (Max) | 1400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | WLCSP, 6-XFBGA |
| Package Length | 1.48 mm |
| Package Name | 6-WLCSP |
| Package Width | 0.98 mm |
| Power Dissipation (Max) | 556 mW, 12.5 W |
| Rds On (Max) | 25 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 900 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
PMCM6501VPEZ | Datasheet
适合移动和便携式设备的 大批量小信号MOSFET， 采用WLCSP和无引脚DFN封装
RC Thermal Models
High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages
LFPAK MOSFET thermal design guide - Part 2
Nexperia package poster
LFPAK MOSFET thermal design guide, Chinese version
Small-signal MOSFETs in WLCSP - Smallest size - lowest RDS(on)
WLCSP Chinese Translation
Power MOSFET frequently asked questions and answers
wafer level chip-scale package; 6 bumps; 1.48 x 0.98 x 0.35 mm
WLCSP6: wafer level chip-size package; 6 bumps (3 x 2)
Using power MOSFETs in parallel