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12 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
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12 V, P-channel Trench MOSFET
12 V, P-channel Trench MOSFET
| Part | Power Dissipation (Max) | Rds On (Max) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | Mounting Type | FET Type | Vgs(th) (Max) | Vgs (Max) | Gate Charge (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package / Case | Package Name | Package Length | Package Width | Operating Temperature (Min) | Operating Temperature (Max) | Technology | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 12.5 W 556 mW | 25 mOhm | 1400 pF | 6.2 A | Surface Mount | P-Channel | 900 mV | 8 V | 29.4 nC 29.4 nC | 4.5 V | 1.8 V | 6-XFBGA WLCSP | 6-WLCSP | 1.48 mm | 0.98 mm | -55 °C | 150 °C | MOSFET (Metal Oxide) | 12 V |