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INFINEON IRF1010EZPBF

IRF540ZPBF

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INFINEON

POWER MOSFET, AUTOMOTIVE, N CHANNEL, 100 V, 36 A, 0.0265 OHM, TO-220AB, THROUGH HOLE

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INFINEON IRF1010EZPBF

IRF540ZPBF

Active
INFINEON

POWER MOSFET, AUTOMOTIVE, N CHANNEL, 100 V, 36 A, 0.0265 OHM, TO-220AB, THROUGH HOLE

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Description

General part information

IRF540 Series

The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF540ZPBF
Current - Continuous Drain (Id) (Tc)36 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)63 nC
Input Capacitance (Ciss) (Max)1770 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220AB
Power Dissipation (Max)92 W
Rds On (Max)26.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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